HN7G01FU 2007-11-01 1 toshiba multi chip discrete device HN7G01FU power management switch application driver circuit application interface circuit application ? q1 (transistor): 2sa1955 equivalent ? q2 (mos-fet): 2sk1830 equivalent q1 (transistor) absolute maximum ratings (ta = 25c) characteristics symbol rating unit collector-base voltage v cbo ?15 v collector-emitter voltage v ceo ?12 v emitter-base voltage v ebo ?5 v collector current i c ?400 ma base current i b ?50 ma q2 (mos-fet) absolute maximum ratings (ta = 25c) characteristics symbol rating unit drain-source voltage v ds 20 v gate-source voltage v gss 10 v drain current i d 50 ma q1, q2 common ratings (ta = 25c) characteristics symbol rating unit power dissipation p c (note 1) 200 mw junction temperature t j 125 c storage temperature range t stg ?55~150 c note: using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operat ing temperature/current/voltage, etc. ) are within the absolute maximum ratings. please design the appropriate reliability upon reviewing the toshiba semiconductor reliability handbook (?handling precautions?/?derating concept and methods?) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). note 1: total rating marking pin assignment (top view) unit: mm jedec D jeita D toshiba D weight: 6.8 mg (typ.) preliminar y
HN7G01FU 2007-11-01 2 q1 (transistor) electrical characteristics (ta = 25c) characteristics symbol test condition min typ. max unit collector cut-off current i cbo v cb = ?15 v, i e = 0 ? ? ?0.1 a emitter cut-off current i ebo v eb = ?5 v, i c = 0 ? ? ? 0.1 ma dc current gain h fe (note 2) v ce = ?2 v, i c = ?10 ma 300 ? 1000 v ce (sat) (1) i c = ?10 ma, i b = ?0.5 ma ? ?15 ?30 collector-emitter saturation voltage v ce (sat) (2) i c = ?200 ma, i b = ?10 ma ? ?110 ?250 mv base-emitter saturation voltage v be (sat) i c = ?200 ma, i b = ?10 ma ? ?0.87 ? 1.2 v note 2: h fe classification a: 300~600, b: 500~1000 q2 (mos-fet) electrical characteristics (ta = 25c) characteristics symbol test condition min typ. max unit gate leakage current i gss v gs = 10 v, v ds = 0 ? ? 1 a drain-source breakdown voltage v (br) dss i d = 100 a, v gs = 0 20 ? ? v drain current i dss v ds = 20 v, v gs = 0 ? ? 1 a gate threshold voltage v th v ds = 3 v, i d = 0.1 ma 0.5 ? 1.5 v forward transfer admittance ? y fs ? v ds = 3 v, i d = 10 ma 20 ? ? ms drain-source on resistance r ds (on) i d = 10 ma, v gs = 2.5 v ? 20 40 application example (power management switch)
HN7G01FU 2007-11-01 3 transistor
HN7G01FU 2007-11-01 4 mos-fet
HN7G01FU 2007-11-01 5 restrictions on product use 20070701-en general ? the information contained herein is subject to change without notice. ? toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity an d vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba produc ts, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshib a products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconduct or devices,? or ?toshiba semiconductor reliability handbook? etc. ? the toshiba products listed in this document are in tended for usage in general electronics applications (computer, personal equipment, office equipment, measuri ng equipment, industrial robotics, domestic appliances, etc.).these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfuncti on or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage incl ude atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, et c.. unintended usage of toshiba products listed in his document shall be made at the customer?s own risk. ? the products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. ? the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba for any infringement s of patents or other rights of the third parties which may result from its use. no license is granted by implic ation or otherwise under any patents or other rights of toshiba or the third parties. ? please contact your sales representative for product- by-product details in this document regarding rohs compatibility. please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
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